DMN62D2UWQ-13

$0.04

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:08738c2a738f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：391mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400µW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN62D2UWQ-13

Overview

The DMN62D2UWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 4.0Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2.0Ω at VGS=5.0V. Continuous drain current reaches 391mA at 25°C. Packaged in an SOT323 housing, it includes gate protection and meets AEC-Q101 automotive standards.

Feature Summary

Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing certification
Integrated gate protection diode for enhanced ESD protection
Low input capacitance and fast switching speed characteristics
Totally lead-free and fully RoHS compliant green device

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your specific automotive application requirements before finalizing procurement.

Selection Notes

Select this component when a single N-channel MOSFET with 60V rating and low on-resistance is required. Ensure the SOT323 package dimensions fit the PCB layout constraints. Verify that the gate threshold voltage and drive levels align with the control circuit capabilities for optimal switching performance.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for automotive environments requiring high reliability and strict change control protocols. The device utilizes silicon technology and is housed in a compact SOT323 surface-mount package.