DMN62D2UWQ-7

$0.05

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9f3ddd2d0e25 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：391mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400µW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN62D2UWQ-7

Overview

The DMN62D2UWQ-7 is a 60V N-channel enhancement mode MOSFET in an SOT323 package. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current (ID) reaches 391mA at VGS=5.0V. Total gate charge (Qg) is 0.8nC, supporting fast switching speeds.

Feature Summary

AEC-Q101 qualified for automotive applications
Low input capacitance and leakage
ESD protected structure
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 3,000-unit tape and reel carrier. Confirm that the component meets AEC-Q101 qualification requirements if used in automotive contexts. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet for the SOT323 package.

Selection Notes

Select this component when a 60V N-channel MOSFET is required in a compact SOT323 footprint. It is suitable for low-current switching applications requiring fast response times. Consider the RDS(ON) variations at different gate voltages when designing drive circuits. Verify compatibility with automotive environmental standards if applicable.

Part Context

This part belongs to Diodes Incorporated's DMN62 series of N-channel enhancement mode MOSFETs. It is manufactured in IATF 16949 certified facilities. The device utilizes silicon technology and is designed to meet stringent automotive reliability standards while maintaining a small physical profile.