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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V X2-DFN1006
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：407mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN62D4LFB-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60V and a gate-source voltage (V_GSS) rating of ±20V. The device provides a continuous drain current (I_D) of 407mA at +25°C, with a pulsed drain current (I_DM) capability of 1A. Static drain-source on-resistance (R_DS(ON)) is specified as a maximum of 2Ω at V_GS = 10V and 3Ω at V_GS = 5V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
Procurement Notes
Verify the specific ordering suffix '-7B' against official documentation to confirm packaging details, specifically the 10,000-unit tape and reel configuration. Ensure that the X1-DFN1006-3 package dimensions align with your PCB footprint requirements. Confirm compliance with environmental directives such as RoHS 3 and halogen-free standards if required for your manufacturing process.
Selection Notes
Select this component when a compact surface-mount solution is required for low-current switching applications. The X1-DFN1006-3 package offers a small form factor suitable for space-constrained designs. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB to manage power dissipation effectively under steady-state conditions.
Part Context
This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN62D4LFB variant specifically utilizes the X1-DFN1006-3 case outline, providing a compact footprint for modern electronic assemblies requiring efficient power handling in small packages.
Replacement Considerations
Consult the manufacturer's datasheet or authorized distributors for verified substitute part numbers. Cross-referencing parameters such as V_DSS, I_D, R_DS(ON), and package type is essential when evaluating alternative components for this application.
