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The DMN63D1LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 250mA at +25°C. The device offers a maximum on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation is rated at 310mW in the SOT363 package. Operating temperature ranges from -55°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated distributors. Confirm datasheet revision DS38033 Rev. 1-2 matches procurement documents. Ensure packaging specifications align with tape and reel requirements for automated assembly processes.
Select this component for applications requiring compact dual-N-channel solutions. Evaluate thermal resistance characteristics against PCB copper coverage constraints. Verify gate threshold voltage compatibility with logic-level drive signals for optimal switching performance.
Part of the DMN63 series designed for surface-mount applications. Manufactured using silicon technology in an ultra-small SOT363 case. Complies with RoHS directives and contains no halogen or antimony compounds.
DMN63D1LW-13: Single channel variant in SOT-323 package. DMN63D1L-13: Single channel variant in SOT-23-3 package. Verify pinout compatibility and electrical parameters before substitution.