DMN63D1LDW-13

DMN63D1LDW-13

  • Description:MOSFET 2N-CH 60V 0.25A SOT363
  • Series:-

SKU:a2cb24830d4b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.25A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:250mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:30pF @ 25V
  • Power - Max:310mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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DMN63D1LDW-13

Overview

The DMN63D1LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 250mA at +25°C. The device offers a maximum on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation is rated at 310mW in the SOT363 package. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration with integrated gate protection diodes
  • Low on-state resistance for high efficiency power management
  • Fast switching speed with low input capacitance
  • Qualified to AEC-Q101 standards for automotive reliability

Applications

  • Motor control circuits
  • Power management functions
  • High efficiency DC-DC converters

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated distributors. Confirm datasheet revision DS38033 Rev. 1-2 matches procurement documents. Ensure packaging specifications align with tape and reel requirements for automated assembly processes.

Selection Notes

Select this component for applications requiring compact dual-N-channel solutions. Evaluate thermal resistance characteristics against PCB copper coverage constraints. Verify gate threshold voltage compatibility with logic-level drive signals for optimal switching performance.

Part Context

Part of the DMN63 series designed for surface-mount applications. Manufactured using silicon technology in an ultra-small SOT363 case. Complies with RoHS directives and contains no halogen or antimony compounds.

Replacement Considerations

DMN63D1LW-13: Single channel variant in SOT-323 package. DMN63D1L-13: Single channel variant in SOT-23-3 package. Verify pinout compatibility and electrical parameters before substitution.

DMN63D1LDW-13DMN63D1LDW-13

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