DMN63D1LT-13

$0.42

Description：MOSFET N-CH 60V 320MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1671b77ce04d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：392 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：330mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN63D1LT-13

Overview

The DMN63D1LT-13 is a surface-mount N-channel enhancement mode MOSFET in an SOT-523 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 320 mA at +25°C, dropping to 260 mA at +70°C. The maximum on-resistance (Rds(on)) is 2 Ω at Vgs = 10V and 3 Ω at Vgs = 5V. Total power dissipation is 260 mW on FR-4 with minimum pads, or 330 mW on high-copper boards. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 automotive standards

Applications

Motor control circuits
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS and halogen-free requirements as specified by the manufacturer's green device definitions. Ensure the procurement channel is authorized to avoid counterfeit risks.

Selection Notes

Select this component for applications requiring a compact SOT-523 footprint with a 60V rating. Consider the thermal resistance values based on the target PCB copper coverage, as power dissipation varies significantly between standard and high-copper layouts. Verify gate drive voltages align with the specified Rds(on) thresholds.

Part Context

This part belongs to the DMN63 series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN63D1LT variant specifically utilizes the SOT-523 case style for space-constrained surface mount designs.