DMN63D1LT-7

$0.13

Description：MOSFET N-CH 60V 320MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:39e709858787 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：392 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：330mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN63D1LT-7

Overview

The DMN63D1LT-7 is a surface-mount N-channel enhancement mode MOSFET in an SOT-523 package. It features a drain-source voltage of 60V and continuous drain currents of 320mA at 25°C and 260mA at 70°C. The device offers low on-resistance, specified as 2Ω maximum at VGS=10V and 3Ω maximum at VGS=5V. Total power dissipation reaches 260mW to 330mW depending on PCB copper coverage. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 automotive standards

Applications

Motor control circuits
Power management functions
High efficiency power supply designs

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by project specifications. Ensure the manufacturer's datasheet revision aligns with design documentation before finalizing procurement orders.

Selection Notes

Select this component when a compact SOT-523 footprint is required for 60V applications. Evaluate thermal performance based on available PCB copper area, as power dissipation varies significantly between minimum pad layouts and larger copper planes. Verify gate drive voltage levels against the specified on-resistance thresholds.

Part Context

This part belongs to the DMN63 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications requiring small form factors. The product line emphasizes low on-resistance while maintaining robust switching characteristics.

Replacement Considerations

Consult official substitution lists or cross-reference databases for verified alternatives. Ensure any replacement maintains identical pinout configurations, voltage ratings, and package dimensions to guarantee compatibility without circuit redesign.