DMN63D1LV-7

$0.30

Description：MOSFET 2N-CH 60V 0.55A SOT563
Series：-

SKU:528c91dcf3dd Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.55A SOT563
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.392nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：30pF @ 25V
Power - Max：940mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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DMN63D1LV-7

Overview

The DMN63D1LV-7 is a dual N-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 550 mA at +25°C. The maximum on-resistance (Rds(on)) is 2 Ω at Vgs = 10V and 3 Ω at Vgs = 5V. Total power dissipation reaches 940 mW on high copper coverage PCBs. Gate threshold voltage is 2.5 V max, with input capacitance at 30 pF.

Feature Summary

Dual N-channel configuration for space-efficient circuit designs
Low on-resistance to minimize conduction losses
Fast switching speed suitable for high-frequency applications
ESD protection up to 2kV

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements directly from the manufacturer datasheet before procurement. Ensure the component matches the exact part number to avoid functional discrepancies.

Selection Notes

Select this component for applications requiring low on-state resistance and superior switching performance. Evaluate thermal resistance values based on the specific PCB copper coverage and pad layout used in the design. Consider the gate threshold voltage range when interfacing with logic-level drivers to ensure reliable turn-on characteristics under varying temperature conditions.

Part Context

This device belongs to the DMN63 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology housed in a compact SOT563 surface-mount case. The product is designed to balance low conduction loss with efficient switching capabilities for portable and power management systems.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent components from other manufacturers.