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Product Detailed Parameters
- Description：MOSFET N-CH 60V 380MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：310mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN63D1LW-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-323 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 380 mA at +25°C ambient temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 2 Ω at Vgs = 10V and 3 Ω at Vgs = 5V. Total power dissipation is rated at 310 mW, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 standards for high reliability
Applications
- Motor Control
- Power Management Functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and halogen-free classification requirements prior to procurement. Ensure the component matches the required thermal resistance characteristics for the intended PCB layout and ambient operating conditions.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V breakdown voltage is required for space-constrained designs. Evaluate the Rds(on) performance at the specific gate drive voltage used in the circuit, as resistance varies significantly between 5V and 10V logic levels. Consider the thermal resistance values provided for different mounting scenarios to ensure adequate heat dissipation within the specified temperature limits.
Part Context
This part belongs to the DMN63 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN63D1LW-7 variant specifically utilizes the SOT-323 case outline for surface mount applications.
Replacement Considerations
Consult official substitution guides or datasheets for verified equivalents. Cross-reference parameters such as Vdss, Id, Rds(on), and package dimensions before implementation.
