DMN63D8L-13

$0.18

Description：MOSFET N-CH 30V 350MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:29cae710a686 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 350MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN63D8L-13

Overview

The DMN63D8L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30 V and a gate-source voltage rating of ±20 V. The device provides a continuous drain current of 350 mA at +25°C, with a pulsed drain current capability of 1.2 A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 2.8 Ω at VGS = 10 V and 3.8 Ω at VGS = 5 V. Total power dissipation is rated at 350 mW in steady state, with a thermal resistance from junction to ambient of 359 °C/W.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance
Features low input capacitance and fast switching speed
Includes an ESD protected gate structure
Qualified to AEC-Q101 standards for high reliability

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The -13 suffix indicates a tape and reel quantity of 10,000 units. Confirm that the required package type matches the SOT23 form factor. Ensure compliance with RoHS and halogen-free requirements if mandated by the design specifications.

Selection Notes

Select this component when a compact single N-channel MOSFET is required for low-voltage applications. The 30 V rating suits systems operating within this voltage range. Consider the RDS(ON) values at different gate voltages to ensure compatibility with available drive signals. Evaluate the thermal characteristics based on the expected PCB copper coverage and ambient conditions.

Part Context

This part belongs to the DMN63D8L series of N-channel enhancement mode MOSFETs. It utilizes a SOT23 surface mount package designed for space-constrained printed circuit board layouts. The device is constructed using silicon technology and is intended for general-purpose switching applications requiring efficient power management.