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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.22A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：220mA
- Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN63D8LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 260 mA at +25°C. The device exhibits a typical on-resistance (RDS(ON)) of 2.8 Ω at VGS = 10 V and 4.2 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 0.87 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOT363 surface-mount package.
Feature Summary
- Dual N-channel configuration with low on-resistance for high efficiency power management
- Fast switching speed combined with low input capacitance
- ESD protected gate structure
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The -13 suffix indicates a standard tape and reel quantity of 10,000 units in the SOT363 case. Confirm that the required component meets all applicable environmental directives and quality standards before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The SOT363 package provides space savings compared to single-channel alternatives. Ensure the gate drive voltage aligns with the specified RDS(ON) characteristics to achieve optimal conduction performance and thermal management within the system constraints.
Part Context
This part belongs to the DMN63 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. These devices are designed specifically for high-efficiency power management applications requiring small surface-mount footprints.
Replacement Considerations
The DMN63D8LDW-7 is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit tape and reel format.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (BVDSS) is rated at 30 V.
How does the on-resistance vary with gate voltage?
The typical RDS(ON) is 2.8 Ω at VGS = 10 V, increasing to 4.2 Ω at VGS = 4.5 V.
Is the gate structure protected against electrostatic discharge?
Yes, the device includes an ESD protected gate structure.
