DMN63D8LDW-7

Overview

The DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 260mA at +25°C, with a static drain-source on-resistance (RDS(ON)) of 2.8Ω at VGS=10V and 4.2Ω at VGS=4.5V. Total power dissipation reaches 400mW in standard FR-4 substrate applications. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration within a compact SOT363 surface mount package
• Optimized for low on-state resistance while maintaining fast switching performance
• Integrated ESD protection on the gate terminal
• Fully lead-free, RoHS compliant, and halogen/antimony free construction

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary. Ensure the design accounts for thermal resistance values based on the specific PCB copper pad layout used during implementation.

Selection Notes

Select this component for high-efficiency power management where space constraints require a small surface mount package. The dual channel architecture allows for independent control or parallel operation. Evaluate the RDS(ON) specifications against the required load currents to ensure adequate thermal performance under steady-state conditions.

Part Context

This part belongs to the DMN63 series of dual N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT363 case. The device is intended for general-purpose switching applications requiring low input capacitance and fast switching speeds.

Replacement Considerations

The DMN63D8LDW-13 is a verified substitute offering identical electrical characteristics but packaged in 10000-unit tape and reels.

FAQ

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current is 800mA, measured with a 10µs pulse duration and a 1% duty cycle.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Graphical data indicates normalized resistance variation across the operating temperature range from -55°C to +150°C.

Is the gate terminal protected against electrostatic discharge?

Yes, the datasheet specifies that the gate is ESD protected.