ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.26A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：260mA
- Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
- Power - Max：450mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN63D8LV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 2.8Ω at VGS = 10V and 4.2Ω at VGS = 5V, with a continuous drain current (ID) of 260mA at TA = +25°C. Total power dissipation is rated at 450mW in an SOT563 package.
Feature Summary
- Dual N-channel configuration for compact circuit design
- Low on-resistance to minimize conduction loss
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC converters
- Power-management functions
- Battery-operated systems and solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet notes. Ensure the selected part number matches the required tape and reel specifications for automated assembly processes.
Selection Notes
Select this component when a dual N-channel MOSFET is required within a 30V system. Evaluate the RDS(ON) values at the intended gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature range and PCB layout conditions.
Part Context
This component belongs to the DMN63 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the SOT563 surface-mount package, designed for high-efficiency power management applications. The series emphasizes minimized on-state resistance while maintaining superior switching performance.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix listed on the manufacturer's website.
