DMN63D8LW-13

$0.12

Description：MOSFET N-CH 30V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e321c5094fbe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN63D8LW-13

Overview

The DMN63D8LW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 380mA at 25°C. The device exhibits a maximum on-resistance of 2.8Ω at VGS=10V and 3.8Ω at VGS=5V. Packaged in an SOT-323 case, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance
Features low input capacitance and fast switching speed
Includes ESD protection up to 1kV
Qualified to AEC-Q101 standards for high reliability

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the ordering suffix matches the required quantity; the -13 suffix indicates a 10000-unit tape and reel packaging format. Confirm the component meets RoHS compliance and halogen-free requirements as specified in the datasheet notes. Ensure the application environment stays within the rated thermal and electrical limits defined in the maximum ratings table.

Selection Notes

Select this component when a compact single N-channel solution with 30V rating is required. The SOT-323 package suits space-constrained designs. Verify gate drive voltage compatibility, as RDS(ON) varies significantly between 4.5V and 10V logic levels. Consider the thermal resistance characteristics if operating near maximum power dissipation limits.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT-323 case. The product is designed to minimize on-state resistance while maintaining switching performance for efficient power management applications.