DMN65D8L-7

$0.10

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:90e053875478 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN65D8L-7

Overview

The DMN65D8L-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a standard SOT23 surface-mount package. It features a drain-source voltage (BVDSS) rating of 60V and a gate-source voltage (VGSS) limit of ±20V. At VGS = 10V, the static drain-source on-resistance (RDS(ON)) is typically 1.9Ω with a maximum of 3Ω, supporting a continuous drain current (ID) of 310mA at +25°C. The device exhibits low input capacitance (Ciss) of 22pF and fast switching characteristics, including a turn-on rise time of 2.8ns and turn-off fall time of 7.3ns. Total power dissipation reaches 540mW on FR-4 substrate.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

DC-DC converters
Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and carrier type. The -7 suffix indicates a standard tape and reel packing quantity of 3,000 units. Confirm that the required component meets all applicable environmental directives, including RoHS and halogen-free standards, as specified in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component when a 60V N-channel MOSFET with moderate current handling capability is required in a compact SOT23 footprint. Ensure the application drive voltage aligns with the specified RDS(ON) performance curves, noting that resistance increases significantly at lower gate-source voltages such as 5V compared to 10V. Verify thermal constraints against the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMN65D8L series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant variant is available under the separate designation DMN65D8LQ, which follows distinct qualification requirements.

Replacement Considerations

An automotive-compliant substitute is available under the part number DMN65D8LQ. Verify that any alternative replacement matches the 60V BVDSS rating, SOT23 package dimensions, and electrical characteristics to ensure circuit compatibility.