DMN65D8LDWQ-13

Overview

The DMN65D8LDWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT363 package with a drain-source voltage rating of 60V and a gate-source voltage limit of ±20V. The device provides a maximum continuous drain current of 200mA at VGS=10V and 170mA at VGS=5V, with a static on-resistance of 6Ω at 10V and 8Ω at 5V. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact surface mount package
• Qualified to AEC-Q101 standards for high reliability applications
• ESD protected gate structure rated at 1kV (HBM)
• Totally lead-free and fully RoHS compliant

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard datasheet lists the -7 suffix for tape and reel quantities; ensure the requested variant matches the required manufacturing format. Confirm compliance requirements such as AEC-Q101 qualification and PPAP capability directly with the manufacturer before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual isolated channels within a minimal footprint. The low gate threshold voltage facilitates efficient drive from low-voltage logic sources. Ensure thermal management accounts for the specified power dissipation limits under steady-state conditions. Verify that the 60V breakdown voltage aligns with the system's maximum operating voltages.

Part Context

This part belongs to the DMN65D8LDWQ series of dual N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in an SOT363 case. The product line targets automotive and industrial markets where space constraints and reliability are critical design parameters.

Replacement Considerations

Consult official substitution guides for electrically equivalent alternatives. Cross-referencing requires matching channel count, voltage ratings, and package dimensions.