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Product Detailed Parameters
- Description：MOSFET N-CH 60V 260MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN65D8LFB-7 is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage rating of ±20V. The device offers a static drain-source on-resistance (RDS(ON)) of 3.0Ω at VGS = 10V and 4.0Ω at VGS = 5V, with continuous drain currents of 400mA at +25°C and 330mA at +25°C under specific thermal conditions. Gate threshold voltage ranges from 1.2V to 2.0V. Total gate charge is 0.87nC at VGS = 10V. The component operates within a junction temperature range of -55°C to +150°C and utilizes the X1-DFN1006-3 surface-mount package.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Gate protected against electrostatic discharge up to 1.2kV HBM
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays Drivers
Procurement Notes
Verify the exact ordering suffix when sourcing components. The DMN65D8LFB-7 designation indicates a tape and reel packaging format containing 3,000 units per reel. Confirm that the received parts match the specified X1-DFN1006-3 case outline and marking codes. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component for applications requiring compact surface-mount solutions with low conduction losses. The device is suitable for circuits operating with gate drive voltages of 5V or 10V. Consider the thermal resistance characteristics when designing heat dissipation strategies for dense PCB layouts. Verify that the required current ratings align with the specific ambient temperature conditions of the target application.
Part Context
This part belongs to the DMN63 series of N-channel MOSFETs produced by Diodes Incorporated. The manufacturer specializes in discrete, analog, and mixed-signal semiconductor products for automotive, industrial, and consumer electronics markets. The DMN65D8LFB-7 represents a newer generation design focused on minimizing on-resistance while maintaining superior switching performance compared to previous iterations.
Replacement Considerations
The datasheet lists the DMN65D8LFB-7B as a similar part number within the same family. Both variants utilize the identical X1-DFN1006-3 case and share the same electrical specifications. The primary distinction lies in the packaging quantity, with the -7 suffix indicating 3,000 units per tape and reel.
