DMN65D8LQ-13

$0.11

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:33e63d3c364d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN65D8LQ-13

Overview

The DMN65D8LQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates in a SOT23 surface-mount package. The device provides a maximum continuous drain current of 310mA at +25°C with a gate-source voltage of 10V, or 270mA at 5V. Its static drain-source on-resistance is specified as 3Ω at 10V and 4Ω at 5V. Total power dissipation reaches 540mW on an FR-4 substrate. The component supports a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 automotive standards

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the required RoHS compliance and lead-free matte tin plating meet project specifications. Ensure the SOT23 footprint matches the recommended pad layout provided in the manufacturer documentation before finalizing procurement orders.

Selection Notes

Select this component when a single N-channel MOSFET with a 60V rating is required in a compact SOT23 package. It is suitable for applications needing moderate current handling up to 310mA. Consider the thermal resistance characteristics if operating near maximum temperature limits. Verify that the gate threshold voltage aligns with the available drive voltage levels in the target circuit design.

Part Context

This part belongs to the DMN65 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN65D8LQ variant specifically utilizes the SOT23 case style, providing a small surface mount solution for space-constrained electronic designs requiring reliable power switching capabilities.