DMN65D9L-13

$0.03

Description：MOSFET BVDSS: 41V-60V SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ae85a4499579 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：270mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN65D9L-13

Overview

The DMN65D9L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 4.2Ω at VGS=4V and 4.0Ω at VGS=10V, supporting continuous drain currents up to 335mA at 25°C. Packaged in an SOT-23 case, it exhibits low input capacitance (41pF) and fast switching characteristics, including turn-on delay times of 3.7ns.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features low input/output leakage and ESD protection mechanisms.
Manufactured using lead-free materials that are fully RoHS compliant and free from halogen and antimony.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm compliance with relevant environmental directives such as RoHS 3 and ensure the component meets the required automotive or industrial standards if applicable. Always consult the manufacturer's latest datasheet for updated mechanical dimensions and thermal characteristics before finalizing procurement.

Selection Notes

Select this component for circuits requiring a compact N-channel MOSFET with a 60V rating and moderate current handling capabilities. The SOT-23 package is suitable for space-constrained surface mount designs. Evaluate the gate threshold voltage and on-resistance curves to ensure compatibility with the intended drive voltage levels and load requirements for optimal efficiency.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with rapid switching speeds. The series targets general-purpose switching applications where small form factors and reliable thermal performance are critical design constraints.

Replacement Considerations

Consult official substitution lists for verified alternatives. Ensure any replacement matches the 60V BVDSS, SOT-23 package, and electrical parameters.