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Product Detailed Parameters
- Description：MOSFET N-CH 60V 210MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.82 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN67D8L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±30V. The device offers a maximum on-resistance (RDS(ON)) of 5Ω at VGS=10V and 7.5Ω at VGS=5V, with continuous drain currents of 230mA at 25°C and 190mA at 5V drive. Total gate charge is 821pC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications
- Low on-state resistance combined with superior switching performance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards required for the intended assembly process before finalizing procurement orders.
Selection Notes
Select this component when a compact SOT23 footprint is required for low-current switching tasks. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired RDS(ON) levels. Evaluate thermal dissipation capabilities against the specified junction-to-ambient thermal resistance values under steady-state conditions.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 case constructed from molded plastic with a matte tin finish annealed over an alloy 42 leadframe. The marking code '7D8' identifies the product type.
Replacement Considerations
The datasheet lists DMN67D8L-7 as a variant within the same family offering identical electrical characteristics but packaged in 3,000-unit tape and reels instead of 10,000-unit reels.
