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Product Detailed Parameters
- Description：MOSFET N-CH 60V 210MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.82 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：340mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN67D8L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 230mA at +25°C. The device offers a low on-resistance of 5Ω at VGS=10V and 7.5Ω at VGS=5V. Total gate charge is 821pC at VGS=10V, with a threshold voltage range of 1.0V to 2.5V. Power dissipation is rated at 340mW in steady state. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard SOT23 case packaged in 3,000 units per tape and reel. Confirm that the component meets all applicable RoHS directives and environmental standards required for the intended assembly process. Ensure the selected supplier provides traceability documentation consistent with manufacturer specifications.
Selection Notes
Select this component when a compact single N-channel MOSFET is required for low-voltage switching applications. The SOT23 package suits space-constrained designs. Evaluate thermal resistance values against the expected ambient temperature and duty cycle to ensure junction temperatures remain within safe operating limits during continuous operation.
Part Context
This part belongs to the DMN67 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed specifically for high-efficiency power management circuits where small form factors are critical.
Replacement Considerations
Check datasheets for alternative parts offering similar 60V ratings and comparable RDS(ON) values. Verify pinout compatibility and package dimensions before substitution. Ensure replacement components meet the same electrical thresholds and thermal requirements.
