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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V 60V SOT563 T&R
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMN67D8LV-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8/SWP surface-mount package. The device features a drain-source breakdown voltage (Vds) of 60 V and supports a continuous drain current (Id) of 17.3 A. Its on-resistance (Rds On) is specified at 6.2 mOhms. The gate-source voltage range is ±20 V, with a threshold voltage (Vgs th) of 2.5 V. Gate charge (Qg) is 37.5 nC. Operating temperatures range from -55°C to +150°C, with power dissipation rated at 2.8 W.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching applications
- Low on-resistance design optimized for high-current performance
- Surface-mount PowerDI5060-8 package for compact board integration
Applications
- Power management circuits requiring low-loss switching
- DC-DC converter output stages
- Load switch applications in portable electronics
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging variants. Ensure compatibility with standard SMD reflow profiles. Cross-reference datasheet revisions for any updates to thermal characteristics or pin configurations before finalizing procurement specifications.
Selection Notes
Select this component when a 60 V N-channel MOSFET with high current capability is required in a compact footprint. Compare Rds On and Qg values against alternative packages to ensure optimal efficiency and drive requirements are met within the target application's thermal constraints.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose switching tasks in consumer, industrial, and computing markets where space-saving surface-mount solutions are preferred over through-hole alternatives.
Replacement Considerations
Consult official substitution guides for equivalent parts. Verify that any substitute matches the 60 V rating, 17.3 A current capacity, and PowerDI5060-8 package dimensions to maintain mechanical and electrical integrity.
