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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V 60V SOT563 T&R
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMN67D8LV-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 210 mA at ambient temperature. The device has a maximum gate-source voltage (Vgs) rating of ±30 V. Key electrical parameters include a maximum gate threshold voltage (Vgs(th)) of 2.5 V at 250 µA, a maximum gate charge (Qg) of 0.82 nC at 10 V, and a maximum input capacitance (Ciss) of 22 pF at 25 V. The component is housed in a SOT-23-3 surface-mount package with a maximum power dissipation of 340 mW.
Feature Summary
- Single N-channel enhancement mode field-effect transistor configuration
- Low gate charge characteristics for efficient switching performance
- Surface-mount design compatible with automated assembly processes
Applications
- General-purpose signal switching applications
- Low-power load switching circuits
- Battery protection and management systems
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging format, as variations may exist between tape-and-reel and cut-tape options. Confirm that the requested quantity aligns with the manufacturer's standard reel size requirements to avoid additional handling fees or order restrictions. Cross-reference the datasheet revision date to ensure compatibility with current design specifications and regulatory compliance standards.
Selection Notes
Select this component when a compact single N-channel MOSFET with a 60 V breakdown voltage is required for low-current applications. The SOT-23-3 package offers space efficiency for portable devices. Ensure the application current does not exceed the 210 mA continuous limit and that the thermal environment supports the 340 mW power dissipation rating without excessive junction temperature rise.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose switching tasks. The series emphasizes low on-resistance and fast switching capabilities within small footprint packages. The DMN67D8LV-7 specifically targets applications requiring moderate voltage ratings and minimal board space utilization in consumer electronics and industrial control modules.
Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements must match the 60 V Vds, 210 mA Id, and SOT-23-3 package constraints. Verify pinout compatibility and electrical parameter tolerances before implementation.
