ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 240MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.82 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Download product information
Overview
The DMN67D8LW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a gate-source voltage (VGSS) rating of ±30 V. The device provides a continuous drain current (ID) of 240 mA at +25°C, with a static drain-source on-resistance (RDS(ON)) of 5.0 Ω at VGS = 10 V and 7.5 Ω at VGS = 5 V. Total power dissipation reaches 470 mW on high copper coverage PCBs. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for low on-state resistance while maintaining superior switching performance
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control circuits
- Power management functions
- Backlighting systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental compliance standards such as RoHS and halogen-free definitions. Ensure the selected package variant matches the intended surface mount layout requirements for SOT323 applications.
Selection Notes
Select this component when a single N-channel MOSFET with 60 V breakdown voltage is required in a compact SOT323 package. Consider the RDS(ON) values at both 5 V and 10 V gate drive levels for efficiency calculations. Evaluate thermal resistance parameters based on the specific PCB copper coverage available in the design.
Part Context
This part belongs to the DMN67 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance for high-efficiency power management. The DMN67D8LW-7 specifically utilizes the SOT323 case style for space-constrained surface mount implementations.
Replacement Considerations
The datasheet lists DMN67D8LW-13 as an alternative packaging option within the same product line. Verify electrical characteristics remain identical before substitution.
