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Product Detailed Parameters
- Description：MOSFET N-CH 75V 7.8A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 35 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN7022LFG-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a continuous drain current of 15A. The device offers low on-resistance values of 22mΩ and 8mΩ for its two channels. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in a PowerDI3333-8 surface-mount package with a power dissipation rating of 900mW.
Feature Summary
- Dual channel configuration for integrated switching applications
- Qualified to AEC-Q101 standards for high reliability automotive use
- Low on-resistance characteristics for efficient power management
Applications
- Automotive electronic systems requiring high reliability components
- Power distribution circuits in vehicle networks
- Load switching applications in automotive infotainment or body control modules
Procurement Notes
Verify the specific suffix 'LFG' indicates AEC-Q101 qualification status as per manufacturer documentation. Confirm the PowerDI3333-8 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the 900mW power dissipation limit under expected operating conditions. Cross-reference the datasheet for exact electrical test conditions to ensure compatibility with your circuit design parameters.
Selection Notes
Select this component when dual N-channel switching is required in space-constrained automotive designs. The AEC-Q101 qualification makes it suitable for harsh environment applications where standard commercial grade parts may fail. Consider the 30V voltage rating and 15A current capacity against your load requirements. The PowerDI3333-8 package offers a compact solution compared to larger discrete packages while maintaining necessary thermal performance.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual MOSFETs. The 'LFG' suffix typically denotes AEC-Q101 automotive qualification and specific packaging. It serves as a dual-channel alternative to single-channel devices like the DMT6010LFG-13, offering integration benefits for applications requiring two independent switches in a small footprint.
Replacement Considerations
Check for direct substitutes within the DMN70xx family that share the same package and pinout. Verify if other manufacturers offer AEC-Q101 qualified dual N-channel MOSFETs with similar Rds(on) and Vds specifications. Ensure any replacement maintains the same thermal resistance characteristics for the PowerDI3333-8 package.
