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Product Detailed Parameters
- Description：MOSFET N-CH 75V 23A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 35 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN7022LFGQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 75V drain-source voltage rating and supports a continuous drain current of 23A. The device utilizes the PowerDI 3333 surface-mount package to provide high power density in a compact footprint. Designed for efficiency, it offers low on-resistance characteristics suitable for various switching applications.
Feature Summary
- Dual N-channel configuration integrated into a single component
- High current handling capability with 23A continuous drain rating
- Compact PowerDI 3333 surface-mount packaging for space-constrained designs
Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Procurement Notes
Verify the specific suffix 'Q' against the manufacturer's official documentation to confirm compliance with automotive or industrial qualification standards. Ensure the ordering part number matches the exact package variant and tape-and-reel specifications required for your assembly process. Cross-reference the datasheet revision date to ensure all electrical parameters are current.
Selection Notes
Select this component when a dual N-channel topology is required within a limited board area. The 75V rating provides headroom for standard 48V systems. Evaluate the thermal performance of the PowerDI 3333 package against your system's heat dissipation requirements. Confirm that the gate charge and threshold voltage align with your driver circuit capabilities.
Part Context
This component belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It shares the PowerDI 3333 form factor with other devices in the family but differs in voltage and current ratings. The dual configuration allows for half-bridge or synchronous rectification topologies without occupying two separate footprints.
