DMN90H2D2HCTI

Description：MOSFET N-CH 900V 6A ITO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:9c0ea013a2f9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 900V 6A ITO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1487 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ITO-220AB
Package / Case：TO-220-3 Full Pack, Isolated Tab

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DMN90H2D2HCTI

Overview

The DMN90H2D2HCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 900 V and a continuous drain current (ID) of 6 A at +25°C case temperature. The static drain-source on-resistance (RDS(ON)) is typically 1.7 Ω at VGS = 10V and ID = 3A, with a maximum of 2.2 Ω. The device operates within a junction temperature range of -55°C to +150°C and utilizes an ITO220AB package.

Feature Summary

Low input capacitance for efficient switching
High BVDSS rating suitable for power applications
Low input/output leakage currents
Lead-free finish compliant with RoHS standards

Applications

Motor controls
Backlighting systems
DC-DC converters
Power management functions

Procurement Notes

This component is officially marked as obsolete and discontinued by the manufacturer. Sourcing new units from authorized channels is not possible. Verification of part authenticity is critical if procuring from secondary markets. Engineers must confirm that any available stock matches the exact DS38826 specification sheet before integration into designs.

Selection Notes

Designers should evaluate alternative active components due to the discontinuation status of this specific part number. Selection criteria should focus on matching the original 900V breakdown voltage and thermal resistance requirements. Verify that replacement candidates offer comparable RDS(ON) performance and fit the existing ITO220AB footprint constraints.

Part Context

Diodes Incorporated produces discrete semiconductors including MOSFETs and diodes. This specific N-channel device belongs to their high-voltage power management portfolio. The product line emphasizes efficiency through low on-resistance and fast switching characteristics for industrial and consumer electronics.