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Product Detailed Parameters
- Description：MOSFET N-CH 900V 2.5A ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The DMN90H8D5HCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 900V and a continuous drain current (ID) of 2.5A at TC = +25°C. The device has a maximum on-resistance (RDS(ON)) of 7Ω at VGS = 10V and ID = 1A. Total gate charge (Qg) is 7.9nC at VDD = 720V, ID = 2A, and VGS = 10V. Power dissipation is 30W at TC = +25°C. Operating temperature range is -55°C to +150°C. Package: ITO220AB.
Feature Summary
- High BVDSS rating suitable for power applications
- Low input capacitance for fast switching
- Low input/output leakage currents
- RoHS compliant with lead-free finish
Applications
- Motor controls
- Backlighting
- DC-DC converters
- Power management functions
Procurement Notes
This component is officially marked as obsolete and discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm authenticity and physical condition upon receipt. Ensure compatibility with existing designs before procurement due to end-of-life status.
Selection Notes
Select this part only if legacy design compatibility is required. Evaluate alternative high-voltage MOSFETs from the same manufacturer for new designs. Consider thermal management requirements given the package type and power dissipation limits. Verify gate drive voltage compatibility with the specified RDS(ON) conditions.
Part Context
Diodes Incorporated produces discrete semiconductors including MOSFETs and diodes. This specific model belongs to their high-voltage N-channel enhancement mode series. The product line targets industrial and consumer electronics requiring robust power switching capabilities within standard through-hole packaging formats.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Contact the manufacturer directly for potential obsolescence management options or recommended alternatives.
