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Product Detailed Parameters
- Description：MOSFET N-CH 950V 2.5A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：950 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB (Type TH)
- Package / Case：TO-220-3
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Overview
The DMN95H8D5HCT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 950 V and a continuous drain current (ID) of 2.5 A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 7 Ω at VGS = 10V and ID = 1A. Total power dissipation is rated at 125 W at TC = +25°C, with a thermal resistance from junction to case of 1 °C/W. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low input capacitance for fast switching performance
- High BVDSS rating suitable for demanding power applications
- Low input/output leakage characteristics
- Lead-free finish compliant with RoHS directives
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific datasheet revision (DS38905 Rev. 3) against your design requirements. Confirm that the TO-220AB package dimensions align with your PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Check for any applicable automotive qualification requirements if intended for such environments.
Selection Notes
Select this component when high voltage blocking capability is required in a through-hole package. Evaluate the RDS(ON) value relative to expected load currents to manage conduction losses. Consider the gate threshold voltage range for compatibility with available drive circuits. Assess thermal dissipation needs based on the application's duty cycle and ambient conditions.
Part Context
This part belongs to the DMN95 series of N-channel MOSFETs from Diodes Incorporated. It utilizes a TO-220AB case style for through-hole mounting. The device is designed for general-purpose power switching applications requiring robust voltage handling capabilities.
Replacement Considerations
The datasheet explicitly states: 'NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART'. No official substitute part numbers are provided in the documentation.
