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Product Detailed Parameters
- Description：MOSFET N-CH 100V 60A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1942 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMNH10H028SCT is a 100V N-channel enhancement mode MOSFET in a TO220AB package. It features a maximum drain-source on-resistance of 28mΩ at VGS=10V and a continuous drain current of 60A at TC=+25°C. The device supports an operating junction temperature up to +175°C, with a thermal resistance from junction to case of 1°C/W. Key electrical parameters include a gate threshold voltage of 2.0V to 4.0V, total gate charge of 31.9nC at VGS=10V, and pulsed drain current capability of 90A.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching testing for robustness
- Qualified to AEC-Q101 standards for automotive reliability
- Low input capacitance and low leakage characteristics
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for the target market. Ensure the procurement channel is authorized by Diodes Incorporated to guarantee product authenticity and traceability.
Selection Notes
Select this component for applications requiring high efficiency power management and fast switching capabilities. Consider the thermal resistance and power dissipation limits when designing heat sinks. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions to ensure optimal performance.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes advanced silicon technology to achieve low on-resistance within the TO220AB through-hole package. The series is designed to meet the demands of modern power electronics with improved thermal handling.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
