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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMNH10H028SPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 40A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 28mΩ at VGS = 10V and ID = 20A. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
- Features wettable flank terminals to facilitate improved optical inspection during assembly.
- Utilizes a thermally efficient PowerDI5060-8 package with a profile under 1.1mm.
- Designed for high conversion efficiency through minimized on-state losses.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS directives and is halogen-free. Ensure the design accommodates the specified thermal resistance values based on the intended PCB copper area and mounting conditions.
Selection Notes
Select this component when an automotive-grade N-channel MOSFET is required for space-constrained designs. The PowerDI5060-8/SWP package provides a low profile suitable for thin applications while maintaining robust thermal performance. Verify that the 100V rating and 40A current capacity align with the system's electrical requirements.
Part Context
This part belongs to the DMNH series of automotive MOSFETs manufactured by Diodes Incorporated. These devices are produced in IATF 16949 certified facilities to support stringent automotive quality standards. The series is designed to offer high reliability and consistent performance for critical vehicle electronic systems.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers within the same automotive qualification framework. Cross-referencing should be limited to components explicitly listed as compatible replacements by the manufacturer.
