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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V TO252 T&
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：97mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：987 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMNH15H110SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 150V drain-to-source voltage rating and supports an 18A continuous drain current. The device exhibits a maximum on-resistance of 70 milliohms at a gate-source voltage of 10V. It operates within a temperature range of -55°C to +175°C junction temperature. The component utilizes a TO-252 (DPAK) surface-mount package with a power dissipation rating of 2W at ambient conditions.
Feature Summary
- High-temperature operation capability up to 175°C junction temperature
- Low on-resistance for efficient power switching
- Enhancement mode N-channel construction
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific datasheet revision and electrical parameter limits directly from the manufacturer's official documentation before integration. Confirm that the TO-252 package thermal characteristics align with the target PCB layout design. Ensure compliance with RoHS and REACH regulatory requirements applicable to the final assembly region.
Selection Notes
Select this component when high-temperature reliability and moderate current handling are required in a compact surface-mount form factor. The 150V rating provides sufficient headroom for standard low-voltage power rails. Evaluate thermal resistance parameters against the system's heat dissipation capabilities to ensure stable operation under load.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose power switching applications. The SK3 suffix indicates the specific tape-and-reel packaging configuration used for automated assembly processes. The DPAK package offers a balance between thermal performance and board space efficiency.
Replacement Considerations
Consult official cross-reference lists or manufacturer substitution guides for verified alternatives. Ensure any replacement maintains identical voltage, current, and package specifications.
