DMNH4004SPS-13

$0.45

Description：MOSFET BVDSS: 31V-40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3b10e502afd5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V-40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2284 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH4004SPS-13

Overview

The DMNH4004SPS-13 is a single N-channel MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 40V and a maximum gate-source voltage (VGSS) of ±20V. The device supports a continuous drain current (ID) of 100A at TC = +25°C and a pulsed drain current (IDM) of 400A. Static drain-source on-resistance (RDS(ON)) is rated at a maximum of 6.0mΩ at VGS = 10V and ID = 50A. Total power dissipation (PD) reaches 2.8W under specific thermal conditions. Operating and storage temperatures range from -55°C to +175°C.

Feature Summary

Designed for high efficiency power management with minimized on-state resistance and superior switching performance.
Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
Features low gate charge (Qg) to minimize switching losses during operation.
Manufactured using lead-free finish materials that are RoHS compliant, halogen-free, and antimony-free.

Applications

Engine Management Systems
Body Control Electronics
DCDC Converters

Procurement Notes

Verify the complete part number DMNH4004SPS-13 against official Diodes Incorporated documentation to confirm the PowerDI5060-8 case style and tape & reel packaging quantity. Ensure compatibility with standard SMD/SMT assembly processes and check for any specific moisture sensitivity level requirements per J-STD-020 before procurement.

Selection Notes

Select this component when a 40V N-channel MOSFET with high current handling capability is required in a thin profile package. Consider the 175°C thermal rating for applications exposed to elevated temperatures. Evaluate the RDS(ON) and Qg specifications against system efficiency targets and switching frequency requirements to ensure optimal thermal and electrical performance.

Part Context

This device belongs to the DMNH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 package, which offers a compact footprint with an exposed drain pad for improved thermal dissipation. The series is engineered to balance low conduction losses with fast switching characteristics for modern power electronics designs.

Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent part numbers. Cross-reference parameters such as BVDSS, ID, RDS(ON), package dimensions, and pinout configuration to ensure functional compatibility without modifying the existing circuit design.