DMNH4005SPSQ-13

$1.56

Description：MOSFET N-CH 40V 80A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9fb82b195d68 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 80A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2847 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.8W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH4005SPSQ-13

Overview

The DMNH4005SPSQ-13 is a 40V N-channel MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 80A at TC=+25°C. The static drain-source on-resistance is 4.0mΩ max at VGS=10V. It supports an operating temperature range from -55°C to +175°C, with a total power dissipation of 1.6W (TC=+25°C) or 2.8W (TC=+100°C).

Feature Summary

Rated for operation up to +175°C junction temperature.
Features 100% unclamped inductive switching capability.
Low gate charge minimizes switching losses.
Package profile under 1.1mm suitable for thin applications.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive supply chains. Ensure the selected part number matches the exact electrical specifications required for the target circuit design.

Selection Notes

Select this component when high ambient temperature tolerance is critical. The low on-resistance reduces conduction losses, while the low gate charge improves switching efficiency. The compact PowerDI5060-8 package is appropriate for space-constrained designs requiring robust thermal performance and high current handling capabilities.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and designed to meet stringent automotive reliability standards. The product utilizes silicon technology and is housed in a lead-free, halogen-free molded plastic package compliant with RoHS directives.