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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50.9 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：2280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMNH4006SPSW-13 is a 40V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a maximum drain-source voltage (BVDSS) of 40V and a low on-state resistance (RDS(ON)) of 7.0mΩ at VGS=10V. The device supports a continuous drain current of 110A at TC=25°C and operates within a temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 50.9nC, and a thermal resistance junction-to-case of 1.1°C/W.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing for robust end applications
- Low RDS(ON) minimizes power losses while maintaining superior switching performance
- Package profile under 1.1mm, ideal for thin application designs
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel carrier configuration as documented in the official datasheet. Confirm that the required operating environment aligns with the standard commercial/industrial grade specifications provided, distinct from the separate automotive-compliant variant. Ensure design inputs match the absolute maximum ratings to prevent device failure.
Selection Notes
Select this component when a 40V rating and high current handling capability near 110A are required in a compact form factor. The low gate charge and fast switching characteristics make it appropriate for high-efficiency power management circuits. Consider the thermal resistance values when designing heat dissipation strategies for dense PCB layouts.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package, which offers a low profile and enhanced thermal performance compared to traditional packages. The series focuses on minimizing on-state resistance to improve overall system efficiency in power conversion applications.
Replacement Considerations
An automotive-compliant version of this component is available under the separate part number DMNH4006SPSWQ. Verify if the specific reliability standards required for your application necessitate the automotive-grade variant instead of the standard commercial version.
