DMNH4011SPSWQ-13

$0.49

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-

SKU:232919b1eb77 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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DMNH4011SPSWQ-13

Overview

The DMNH4011SPSWQ is a 40V N-channel enhancement mode MOSFET housed in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a gate-source voltage rating of ±20V. The device supports a continuous drain current of 80A at +25°C case temperature, with a maximum on-resistance of 10mΩ at VGS=10V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C for high ambient temperature environments
100% tested for unclamped inductive switching reliability
Low gate charge minimizes switching losses
Low on-resistance reduces conduction losses

Applications

Engine management systems
DC-DC converters
Body control electronics

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 2,500 units. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive assembly lines. Ensure the selected variant matches the PowerDI5060-8/SWP (Type UX) physical dimensions.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low gate charge and on-resistance make it suitable for efficient power conversion. Verify that the 40V breakdown voltage aligns with the system's maximum operating voltage and transient conditions.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for stringent industry standards. It is manufactured in IATF 16949 certified facilities and utilizes a 'Green' molding compound free from halogens and antimony. The device is specifically engineered to meet the durability requirements of modern vehicle electronic architectures.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating pin configurations, thermal characteristics, and electrical ratings against the original datasheet specifications.