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Product Detailed Parameters
- Description：MOSFET N-CH 40V 220A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4043 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：240W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMNH45M7SCT is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 220A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 6.0mΩ at VGS = 10V and ID = 20A. It supports an operating temperature range from -55°C to +175°C, with a power dissipation of 240W at TC = +25°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Designed to minimize RDS(ON) while maintaining superior switching performance
- Low input capacitance and low input/output leakage characteristics
Applications
- Motor controls
- Backlighting
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm compliance with RoHS directives and Halogen/Antimony-free requirements if mandated by project specifications. Ensure the TO220AB package dimensions align with the target PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when applications require high-efficiency power management with robust thermal capabilities. The +175°C rating makes it suitable for demanding environments. Evaluate the 6.0mΩ RDS(ON) against system conduction loss requirements and verify that the 220A continuous current rating meets peak load demands within the specified thermal conditions.
Part Context
This part belongs to Diodes Incorporated's new generation enhancement mode MOSFET lineup. These devices are engineered to balance low on-resistance with fast switching speeds. The product line targets high-efficiency power-management solutions across various industrial and consumer electronics sectors.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on voltage or current ratings without verifying pinout and thermal resistance parameters.
