DMNH6008SCT

$1.07

Description：MOSFET N-CH 60V 130A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:3ff627185b55 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 130A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2596 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：210W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMNH6008SCT

Overview

The DMNH6008SCT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 130A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 8.0mΩ at VGS = 10V and ID = 20A. It operates within a temperature range of -55°C to +175°C, with a power dissipation of 210W at TC = +25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested
Low input capacitance and leakage currents
Qualified to AEC-Q101 standards

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific datasheet revision and ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the TO220AB package and tube packaging align with design requirements. Ensure compliance with RoHS and REACH directives as specified in the manufacturer's quality definitions.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and robust switching performance. Consider the thermal characteristics and safe operating area when designing for high ambient temperatures or pulsed current loads. Verify gate drive compatibility with the specified threshold voltage ranges.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO220AB case constructed from molded plastic with a green molding compound. The terminals feature a matte tin finish annealed over a copper leadframe, ensuring solderability per MIL-STD-208.