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Product Detailed Parameters
- Description：MOSFET N-CH 60V 130A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：2596 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：210W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMNH6008SCTQ is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 60V and a maximum on-resistance of 8.0mΩ at VGS=10V. The device supports a continuous drain current of 130A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in TO-220AB, it includes low input capacitance and high reliability ratings.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching testing
- Low input capacitance and leakage currents
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix 'SCTQ' against official Diodes Incorporated documentation to confirm tube packaging details. Ensure compliance with RoHS directives and confirm that the component meets the required AEC-Q101 qualification levels for your specific automotive application environment before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring robust performance in high ambient temperatures. The TO-220AB package facilitates effective thermal management for power dissipation needs. Verify that the gate drive voltage aligns with the specified RDS(ON) characteristics to ensure optimal efficiency in motor control or power conversion designs.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. These devices are engineered specifically to meet stringent automotive industry requirements. The series emphasizes reliability through rigorous testing protocols and material specifications suitable for demanding electronic environments.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts. Do not substitute based solely on generic electrical parameters without confirming package compatibility and automotive qualification status.
