DMNH6008SPS-13

$1.50

Description：MOSFET N-CH 60V 16.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:158b31e7667c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2597 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6008SPS-13

Overview

The DMNH6008SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 16.5A at +25°C ambient temperature, with a pulsed drain current (IDM) capability of 352A. At VGS = 10V and ID = 20A, the static drain-source on-resistance (RDS(ON)) is typically 6.0mΩ, with a maximum of 8.0mΩ. Total gate charge (Qg) is 40.1nC at VGS = 10V. Operating junction temperatures range from -55°C to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching testing for robust end applications
Utilizes a thermally efficient PowerDI5060-8 package profile under 1.1mm
Compliant with RoHS directives and halogen/antimony-free standards

Applications

Notebook battery power management systems
Load switch circuits
Motor control applications
DC-DC converters
General power management modules

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the required package variant matches the PowerDI5060-8 footprint dimensions provided in the mechanical data section. Ensure design compatibility with the specified JEDEC qualification standards for high reliability requirements before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring a 60V N-channel MOSFET capable of handling 16.5A continuous current. The low RDS(ON) specification minimizes conduction losses, while the fast switching speed supports high-frequency DC-DC converter topologies. Verify thermal management strategies align with the junction-to-ambient resistance values provided for FR-4 substrates to maintain safe operating area limits.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI®5060-8 surface mount package, which integrates multiple drain pins for improved thermal dissipation. The product line targets mobile and industrial applications demanding high conversion efficiency and compact form factors within thin electronic devices.