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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1882 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH6009SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 95A at TC = +25°C, with a static drain-source on-resistance (RDS(ON)) of 7.3mΩ at VGS = 10V and 15mΩ at VGS = 4.5V. Packaged in a PowerDI5060-8 surface-mount format, it includes an exposed drain pad for thermal management.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Low RDS(ON) characteristics designed to minimize power losses during conduction
- Low gate charge (Qg) specifications intended to reduce switching losses
- Package profile under 1.1mm, optimized for thin application designs
Applications
- Power-management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the manufacturer's ordering information. Confirm that the component marking 'NH6009SS' matches the physical device received. Ensure compliance requirements such as RoHS and Halogen-free status are validated against the latest product definitions provided by Diodes Incorporated before finalizing procurement.
Selection Notes
Select this component when designing systems requiring a 60V N-channel MOSFET capable of handling high continuous currents up to 95A. The low on-resistance values at both 10V and 4.5V gate drive voltages make it suitable for various logic-level and standard drive applications. Consider the PowerDI5060-8 package dimensions and thermal resistance characteristics when planning PCB layout and heat dissipation strategies for the target environment.
Part Context
This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI5060-8 package. The series is designed to balance low on-state resistance with superior switching performance for efficient power management solutions.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Consult the official Diodes Incorporated automotive products listing for compatible alternatives.
