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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1882 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMNH6009SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device offers a maximum on-resistance of 7.3mΩ at VGS=10V with a continuous drain current of 95A, or 15mΩ at VGS=4.5V with 67A. Packaged in a PowerDI5060-8/SWP (Type UX) footprint, it includes wettable flank terminals for optical inspection.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Wettable flank package design facilitates improved optical inspections
- Qualified to JEDEC standards for high reliability applications
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the 'SPSW' designation aligns with the required PowerDI5060-8/SWP (Type UX) package variant featuring wettable flanks. Ensure the component meets the necessary RoHS and Halogen-free compliance requirements for your target assembly process.
Selection Notes
Select this component when low on-state resistance is critical for minimizing power losses in high-efficiency designs. The +175°C rating makes it suitable for environments with elevated ambient temperatures. Verify that the gate drive voltage supports the desired RDS(ON) performance, as resistance varies significantly between 4.5V and 10V gate thresholds.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package, which provides a profile under 1.1mm. The series is designed to balance low conduction losses with superior switching performance for compact power management solutions.
Replacement Considerations
For automotive applications requiring AEC-Q100 qualification and IATF 16949 manufacturing, refer to the related Q-suffix parts listed in the manufacturer's automotive product documentation.
