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Product Detailed Parameters
- Description：MOSFET N-CH 60V 60A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMNH6012LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 12mΩ at VGS=10V and 18mΩ at VGS=4.5V, supporting continuous drain currents of 60A at 25°C case temperature and 40A at 100°C case temperature. Packaged in a TO-252 (DPAK) housing with a matte tin finish, it is supplied in tape and reel quantities of 2500 units.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Rated for operation up to +175°C junction temperature
- Guaranteed 100% unclamped inductive switching capability
Applications
- Body control electronics
- DC/DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and halogen-free requirements as defined by the manufacturer's green product standards. Ensure procurement channels are authorized to prevent counterfeit components.
Selection Notes
Select this component for high-reliability automotive environments requiring robust thermal performance up to 175°C. Evaluate the low input capacitance and gate charge parameters against switching frequency requirements. Verify that the package thermal resistance aligns with the system's heat dissipation capabilities under steady-state conditions.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs designed specifically for automotive applications. It utilizes silicon technology and is housed in a standard TO-252 surface-mount package. The series emphasizes high reliability through AEC-Q101 qualification and enhanced ruggedness via guaranteed UIS testing.
Replacement Considerations
Consult official substitution lists from Diodes Incorporated for verified equivalents. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
