DMNH6012LK3Q-13

$1.05

Description：MOSFET N-CH 60V 80A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3fefdc4c312d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 80A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6012LK3Q-13

Overview

The DMNH6012LK3Q is a single N-channel enhancement mode MOSFET rated for 60V drain-source voltage. It supports continuous drain currents of 80A at +25°C case temperature and 60A at +100°C. The device features a maximum on-resistance of 12mΩ at VGS=10V and 18mΩ at VGS=4.5V, both tested at 25A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-252 (DPAK) package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Rated for operation up to +175°C junction temperature
Guaranteed 100% unclamped inductive switching performance

Applications

Engine management systems
Body control electronics
DC/DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the component meets all applicable RoHS directives and halogen-free requirements for your assembly process. Ensure design compliance with IATF 16949 manufacturing standards if used in regulated automotive supply chains.

Selection Notes

Select this component when high current handling and robust avalanche energy ratings are required in compact surface-mount designs. The low on-resistance characteristics support efficient power conversion in high ambient temperature environments. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.

Part Context

This part belongs to Diodes Incorporated's DMNH series of automotive-grade N-channel MOSFETs. It is manufactured in IATF 16949 certified facilities to meet stringent automotive quality requirements. The device utilizes silicon technology optimized for high reliability and thermal performance in demanding electronic control applications.