DMNH6021SPDQ-13

Overview

The DMNH6021SPDQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 60V and operates up to +175°C. At VGS=10V, the maximum on-resistance (RDS(ON)) is 25mΩ with a continuous drain current (ID) of 32A at TC=+25°C. At VGS=4.5V, RDS(ON) is 40mΩ with an ID of 25A. The device supports pulsed drain currents up to 80A and includes avalanche energy ratings of 64mJ.

Feature Summary

• Qualified to AEC-Q101 standards for automotive applications with PPAP capability.
• Rated for operation in high ambient temperature environments up to +175°C.
• Features 100% unclamped inductive switching testing for robust end-application reliability.
• Designed for low on-state losses and fast switching speeds.

Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the required package variant matches either Site 1 (Type C) or Site 2 (Type UXD) specifications to ensure compatibility with the intended PCB pad layout and manufacturing process.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact surface-mount footprint. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance values relative to the expected duty cycle and ambient conditions to maintain junction temperatures within the rated operating range.

Part Context

This part belongs to Diodes Incorporated's DMNH series of automotive-grade MOSFETs manufactured in IATF 16949 certified facilities. The PowerDI5060-8 package provides a balance of thermal performance and space efficiency compared to traditional leaded packages, supporting high-current applications in constrained board areas.

Replacement Considerations

Direct substitutes include DMNH6021SPDQ and DMNH6021SPD-13, which share identical electrical characteristics and pinouts. Verify package type consistency between Type C and Type UXD variants when swapping sources.

FAQ

What is the maximum avalanche energy rating for this device?

The DMNH6021SPDQ has a maximum avalanche energy (EAS) rating of 64 mJ when tested with an inductance of 0.1mH.

Is the device suitable for high-temperature automotive environments?

Yes, the MOSFET is rated to operate at junction temperatures up to +175°C and is qualified to AEC-Q101 standards.

How does the on-resistance vary with gate voltage?

At VGS = 10V, the maximum RDS(ON) is 25mΩ. At VGS = 4.5V, the maximum RDS(ON) increases to 40mΩ.