DMNH6022SSD-13

$1.14

Description：MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Series：-

SKU:640f918d34a3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：7.1A, 22.6A
Rds On (Max) @ Id, Vgs：27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2127pF @ 25V
Power - Max：1.5W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMNH6022SSD-13

Overview

The DMNH6022SSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 60 V and a gate-source voltage (VGS) rating of ±20 V. The device supports a continuous drain current of 22.6 A at TC = +25°C and 7.1 A at TA = +25°C. Maximum on-resistance (RDS(ON)) is specified as 27 mΩ at VGS = 10V and 30 mΩ at VGS = 6V. Total gate charge (Qg) reaches 32 nC at VGS = 10V. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
Features 100% unclamped inductive switching capability for robust end applications
Qualified to AEC-Q101 standards for automotive reliability
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification level if deploying in automotive contexts. Ensure thermal management design accounts for the specified thermal resistance values under intended mounting conditions.

Selection Notes

Select this component when a dual N-channel configuration with low on-resistance is required for power management circuits. The 60V rating and high current capacity make it appropriate for automotive body control and engine management systems. Verify that the SO-8 package dimensions fit the target PCB layout constraints.

Part Context

This part belongs to the DMNH series of dual N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is packaged in an SO-8 case. The product is marketed as a 'Green' device due to its compliance with environmental directives regarding lead, halogens, and antimony content.