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The DMNH6035SPDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 35mΩ at VGS=10V and 44mΩ at VGS=4.5V, supporting continuous drain currents of 33A and 29A respectively. Packaged in a PowerDI5060-8 with wettable flanks, it includes 100% UIS testing and meets AEC-Q101 standards.
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and IATF 16949 manufacturing compliance. Confirm the package type matches the PowerDI5060-8 specification with wettable flank technology. Ensure the ordering quantity aligns with the standard tape and reel packing configuration provided by the manufacturer.
Select this component for designs requiring high thermal stability and robust automotive-grade reliability. The low on-resistance minimizes conduction losses, while the dual-channel configuration saves board space. Verify that the gate drive voltage supports the specified RDS(ON) performance levels under expected operating conditions.
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes the PowerDI5060-8 surface-mount package to provide efficient heat dissipation and compact footprint. The device is manufactured in facilities certified to IATF 16949 standards, ensuring consistent quality for critical electronic systems.
Consult official substitution lists for verified equivalents. Generic replacements may lack the required AEC-Q101 qualification or wettable flank construction necessary for automotive optical inspections.
Yes, the device is rated to operate at junction temperatures up to +175°C, making it ideal for high ambient temperature applications.
The PowerDI5060-8 package includes wettable flanks, which facilitate improved optical inspections during the manufacturing process.
Yes, the device is tested for 100% unclamped inductive switching (UIS) capability during production.