DMNH6042SK3-13

$0.86

Description：MOSFET N-CH 60V 25A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b1a6dccea44b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 25A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：492 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6042SK3-13

Overview

The DMNH6042SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 25A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 50mΩ at VGS = 10V and 65mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-252 (DPAK) surface-mount package.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features 100% unclamped inductive switching capability for robust end applications
Designed with low on-resistance and low input capacitance for high-efficiency power management

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration as documented in the official datasheet. Confirm that the standard DMNH6042SK3 variant meets all required electrical parameters if automotive qualification under AEC-Q101 standards is not explicitly mandated for the application.

Selection Notes

Select this component when a 60V N-channel MOSFET capable of handling 25A continuous current is required. Ensure the design accommodates the specified thermal resistance values for both ambient and case-mounted configurations. Verify gate drive voltages align with the RDS(ON) specifications provided for 10V and 4.5V conditions to optimize conduction losses.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO-252 (DPAK) case constructed with molded plastic green molding compound. The terminal finish consists of matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-208 standards.