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Product Detailed Parameters
- Description：MOSFET N-CH 60V 25A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH6042SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (Type C) surface-mount package. It features a drain-source voltage rating of 60V and supports continuous drain currents up to 24A at TC=+25°C. The device offers low on-state resistance, specified as a maximum of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V. Designed for high reliability, it operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 automotive standards.
Feature Summary
- Dual N-channel configuration integrated into a single compact PowerDI5060-8 package
- Qualified to AEC-Q101 standards for high reliability applications
- Rated for operation in high ambient temperatures up to +175°C
- Features 100% unclamped inductive switching capability
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the standard DMNH6042SPD part number aligns with your design requirements, noting that an automotive-compliant variant exists under the separate DMNH6042SPDQ datasheet. Ensure component authenticity through authorized distribution channels to guarantee compliance with RoHS and lead-free specifications.
Selection Notes
Select this component for designs requiring dual N-channel MOSFETs in a space-constrained footprint. The PowerDI5060-8 case provides superior thermal dissipation compared to traditional packages. Consider the 60V breakdown voltage and low RDS(ON) characteristics for efficient power management. Verify gate drive compatibility with the specified threshold voltages and ensure PCB layout accommodates the exposed drain pad for optimal thermal performance.
Part Context
This component belongs to the DMNH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI family, which is designed for high-efficiency power management. The device is marketed as a 'Green' product, being halogen and antimony-free while maintaining full RoHS compliance.
Replacement Considerations
The DMNH6042SPDQ is the automotive-compliant substitute part number available under a separate datasheet. Verify pinout compatibility and thermal resistance values when substituting with other dual N-channel MOSFETs in the PowerDI5060-8 package.
