DMNH6042SPDQ-13

$1.16

Description：MOSFET NCH 60V 5.7A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:51c38fcf031f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET NCH 60V 5.7A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6042SPDQ-13

Overview

The DMNH6042SPDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device integrates two independent channels in a PowerDI®5060-8 package, offering low on-resistance of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V. Continuous drain current reaches 24A at TC=+25°C. It includes an integrated body diode with fast reverse recovery characteristics.

Feature Summary

Dual channel integration within a compact PowerDI®5060-8 surface mount package
Qualified to AEC-Q101 standards with PPAP capability for automotive use
Rated for high ambient temperatures with operation up to +175°C
100% unclamped inductive switching tested for robustness

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the 'DQ' designation aligns with required automotive change control protocols and IATF 16949 manufacturing facility sourcing before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require dual independent switches in a single footprint. Ensure thermal management strategies account for the 105°C/W junction-to-ambient resistance on standard FR-4 substrates. Verify gate drive voltages meet the threshold requirements for optimal RDS(ON) performance at both 4.5V and 10V logic levels.

Part Context

This part belongs to Diodes Incorporated's DMNH series of automotive-grade MOSFETs. It utilizes the PowerDI®5060-8 (Type C) leadless package technology, which provides improved thermal dissipation compared to traditional plastic packages while maintaining a small board area profile suitable for dense PCB layouts.

Replacement Considerations

Consult official Diodes Incorporated cross-reference documentation for verified substitutes. Do not assume pin compatibility or electrical equivalence with other manufacturers' SOIC-8 or PowerDI devices without validating datasheet parameters against the original specification.