DMNH6042SPS-13

$0.86

Description：MOSFET N-CH 60V 24A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:00f9145a789a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 24A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6042SPS-13

Overview

The DMNH6042SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V. Continuous drain current (ID) ratings are 24A at TC=+25°C and 17A at TC=+100°C. Total gate charge (Qg) is 8.8nC at VGS=10V. It utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Engineered for high-efficiency power management with minimized on-state resistance and superior switching performance.
Rated for operation in high ambient temperature environments up to +175°C.
Features 100% unclamped inductive switching capability for robust end-application reliability.
Low gate charge characteristics designed to minimize switching losses.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the required package variant matches the standard PowerDI5060-8 or the SWP Type UX pinout as defined in the datasheet. Ensure compliance with RoHS directives and Halogen-free requirements if applicable to the target assembly process.

Selection Notes

Select this component when a 60V N-channel MOSFET is required for applications demanding low conduction losses and high thermal stability. The PowerDI5060-8 package provides an optimal balance between current handling capabilities and board space constraints. Consider the RDS(ON) specifications relative to the expected gate drive voltage to ensure efficient power dissipation under load conditions.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are specifically designed to optimize the trade-off between on-resistance and switching speed. The series targets automotive and industrial sectors requiring reliable power switching solutions in compact surface-mount form factors.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMNH6042SPSQ. Verify if the specific qualification standards required for the application necessitate the use of the qualified variant over the standard commercial grade device.